Abstract
In the current work, we show a detailed analysis of the transverse beam profile and polarization characteristics of devices with one and three oxide apertures. A Gaussian transverse beam profile is achieved with an oxide aperture diameter of less than 6 μm. The laser light is linearly polarized with a high degree of polarization (> 97 %) in the complete current range. The stable polarization direction can be attributed to ordering effects ocurring during epitaxial growth of the GaInP material system and a reduction in crystal symmetry. Different oxide aperture diameters can be implemented in one device due to high oxidation selectivity of the Al<sub>x</sub>Ga<sub>1-x</sub>As layer depending on aluminum content. These deep oxidation layers lead to a reduction of the parasitic capacitance, while beam profile and polarization characteristics are not affected.
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