Abstract
Transverse magnetoresistance in single crystals of bismuth doped with gallium and indium has been measured as functions of magnetic field up to 0.75 T and as functions of temperature between 80 and 300 K. Magnetoresistance does not obey the quadratic dependence on magnetic field strength in the low temperature limit and an approximately quadratic field dependence has been found nearly at room temperature. An attempt has been made here to explain the observed facts in these alloys of bismuth on the basis of an ellipsoidal non-parabolic band model.
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