Transverse magnetoresistance of GaAs/AlxGa1-xAs heterojunctions in the presence of parallel magnetic fields.

Abstract

We have calculated the resistivity of a GaAs/${\mathrm{Al}}_{\mathit{x}}$${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$As heterojunction in the presence of both an in-plane magnetic field and a weak perpendicular component using a semiclassical Boltzmann transport theory. These calculations take into account fully the distortion of the Fermi contour which is induced by the parallel magnetic field. The scattering of electrons is assumed to be due to remote ionized impurities. A positive magnetoresistance is found as a function of the perpendicular component, in good qualitative agreement with experimental observations. The main source of this effect is the strong variation of the electronic scattering rate around the Fermi contour which is associated with the variation in the mean distance of the electronic states from the remote impurities. The magnitude of the positive magnetoresistance is strongly correlated with the residual acceptor impurity density in the GaAs layer. The carrier lifetime anisotropy also leads to an observable anisotropy in the resistivity with respect to the angle between the current and the direction of the in-plane magnetic field. \textcopyright{} 1996 The American Physical Society.