Abstract
Abstract : The transverse magnetoresistance and Hall coefficient in high-resistivity n-type germanium were measured in pulsed magnetic fields up to 175 kgauss at temperatures between 20K and 70K. The magnetoresistance ratio was roughly proportional to HT to the minus 1.2 power for fields above 100 kgauss and temperatures below 40K for two orientations; H in the direction. It was proportional to H to the 1.2 power T to the minus 1.5 power for H in the direction. This behavior is not attributed to gradients in carrier concentration or to surface effects. The Hall coefficient increased with H at temperatures below 20K for H in the direction. This is attributed to a decrease in the conduction-band electron density due to a change in the ionization energy. Calculations by D. F. Minner predict such a decrease for H in the direction but no decrease for H in the direction. (Author)
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