Abstract
Abstract Transverse effects influencing the thermally induced optical bistability in GaAs/GaA1As quantum well material and thus its performance as a temperature sensor are analyzed. They influence significantly the condition of steady-state thermally induced optical bistability in the sample. The longitudinal heat relaxation in the multiple quantum well structure is determined from the measured lateral profile of the temperature. A very good agreement between measured lateral profiles and theoretical simulations based on the calculated heat relaxation time in our integrated device is obtained. The results found will be important for a miniaturization of the device.
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