Abstract
The out-of-plane resistivity of high-quality YPrBaCuO single crystals was measured and analyzed within the range –300 K. The temperature dependence of the resistivity can be described well by a model that takes into account scattering of electrons by phonons and defects, in conjunction with a transition to the ‘semiconductor’-type behavior with increasing praseodymium concentration. The effect of fluctuations is described well by the 3D Aslamazov–Larkin model. The electron–phonon interaction in the YPrBaCuO is strong, but it is weakened with increasing praseodymium concentration. A parabolic correlation between the critical temperature and the parameter characterizing the volume fraction of the ‘semiconductor’ phase was observed. The quantified scattering and fluctuation parameters in the investigated interval of praseodymium concentrations () are reported.
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