Abstract

Application of an electric stimulus to a material with a metal-insulator transition can trigger a large resistance change. Resistive switching from an insulating into a metallic phase, which typically occurs by the formation of a conducting filament parallel to the current flow, is a highly active research topic. Using the magneto-optical Kerr imaging, we found that the opposite type of resistive switching, from a metal into an insulator, occurs in a reciprocal characteristic spatial pattern: the formation of an insulating barrier perpendicular to the driving current. This barrier formation leads to an unusual N-type negative differential resistance in the current-voltage characteristics. We further demonstrate that electrically inducing a transverse barrier enables a unique approach to voltage-controlled magnetism. By triggering the metal-to-insulator resistive switching in a magnetic material, local on/off control of ferromagnetism is achieved using a global voltage bias applied to the whole device.

Highlights

  • Application of an electric stimulus to a material with a metal-insulator transition can trigger a large resistance change

  • We study volatile resistive switching based on electrical triggering of an metal–insulator transition (MIT) in La0.7Sr0.3MnO3 (LSMO) thin film devices

  • Resistive switching in LSMO manifests as strong nonlinearities in the in the current–voltage (I–V) characteristics

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Summary

Introduction

Application of an electric stimulus to a material with a metal-insulator transition can trigger a large resistance change. Using the magneto-optical Kerr imaging, we found that the opposite type of resistive switching, from a metal into an insulator, occurs in a reciprocal characteristic spatial pattern: the formation of an insulating barrier perpendicular to the driving current. There has been a great interest in a different type of resistive switching: volatile switching due to electrical triggering of a metal–insulator transition (MIT), i.e. an intrinsic phase transition that alters the charge transport properties of a material (e.g., Mott or Peierls transition). The application of an electric stimulus causes a local phase transition due to Joule heating and/ or field-induced carrier doping[25,28,31,32,33,34,35] This local transition often follows a characteristic spatial pattern: the formation of a percolating metallic phase filament serving as a conduit for paramagnetic insulator. We discuss the implications of our finding to nonvolatile ionic-migration-based low- to highresistance switching

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