Abstract
The oscillatory behavior in the conductance of narrow channels in semiconductor heterostructures interrupted by a finite number of potential barriers can be explained by resonant tunneling of noninteracting electrons in a single one-dimensional subband. A simple and powerful method based on a generalized wave-impedance concept is used to calculate the transmission coefficient for electrons passing through such devices. The results show intriguing similarities with recent experiments.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have