Transport Property Tuned by Gate Irradiation in ZnO Nanotetrapod Devices

Abstract

The transport properties tuned by gate electron-beam irradiation was investigated for ohmic- and Schotty-contact-type semiconductor optoelectronic devices based on a single zinc oxide (ZnO) nanotetrapod. Measurements of the I–V characteristics and time-dependent current were conducted. The results indicate that, for both ohmic and Schottky contact devices, the electrical transport properties can be readily tuned by electron-beam irradiation at the gate leg of the tetrapod, with favorable repeatability and reversibility. The response for the Schottky-contact-type device was obviously greater than that for the ohmic-contact-type device, and the closer the irradiated position approached the crystal nucleus, the larger the current response became. A probable mechanism is proposed and discussed. The ZnO nanotetrapod could potentially be used as a detector in irradiation environments.