Abstract
The electron drift mobility of undoped Cd0.9Zn0.1Te grown by high-pressure Bridgman method is measured by a time-of-flight technique. The sample shows a room temperature mobility and mobility lifetime product of 950 cm2/Vs and 1.6 × 10−4cm2/V, respectively. The mobility increases monotonically with decreasing temperature to 3000 cm2/Vs at 100 K. The dominant scattering mechanism for the electron transport is discussed by comparing with the theoretical mobility obtained by iterative solution of the Boltzmann equation.
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