Abstract
Transport properties of small-sized intrinsic Josephson junctions in Bi 2Sr 2CaCu 2O y have been systematically investigated with respect to both junction size and temperature. Using electron-beam lithography and Ar ion milling, we have successfully fabricated mesas with lateral dimensions ranging from sub-μm 2 to several tens μm 2 on the same crystal. Typical multiple resistive branches with hysteresis and well defined gap structures were observed in the I– V characteristics of the mesas at 4.2 K. In addition, we observed the suppression of the critical current densities as lateral dimensions of the mesa decrease down to less than 1 μm 2. We interpret the decrease in J c of submicron junctions in terms of the contribution of the Coulomb blockade effect.
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