Abstract
We measured I-V characteristics and electrical resistance, in the temperature range from room temperature to above 600K in order to obtain nanodevices. Measurements were taken on a single V2O5 nanowire deposited on a Si template, where two-point and four-point metallic contacts were previously made using e-beam lithography. In both two- and four-point probe measurements, the I-V curves were clearly linear and symmetrical with respect to both axes. Drastic reduction in electrical resistance and deviation from single valued activation energy with increasing temperature indicated phase transitions taking place in the nanowire. From temperature-dependent HR-Micro Raman measurements, reductions from V2O5 to VO2/V2O3 phases took place at a temperature as low as 500K, when electrons were injected to the nanowire through electrical contacts.
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