Transport properties of near surface InAs two-dimensional heterostructures

Abstract

Two-dimensional electron systems confined to the surface of narrowband semiconductors have attracted great interest since they can easily integrate with superconductivity (or ferromagnetism) enabling new possibilities in hybrid device architectures and study of exotic states in proximity to superconductors. In this work, we study indium arsenide heterostructures where a combination of a clean interface with superconductivity, high mobility, and spin-orbit coupling can be achieved. The weak antilocalization measurements indicate the presence of strong spin-orbit coupling at high densities. We study the magnetotransport as a function of top barrier and density and report a clear observation of integer quantum Hall states. We report improved electron mobility reaching up to 44 000 cm2/Vs in undoped heterostructures and well developed integer quantum Hall states starting as low as 2.5 T.