Abstract
Cu-TiC thin films possess a unique combination of optical and electrical properties. In this work, Cux-TiyCz thin film is deposited on Si (1 0 0) substrate by DC magnetron sputtering process. The Hall results revealed n-type conductivity and carrier concentration in the order of 1018 m−3, when Cu/TiC atomic percentage ratio (r) is varied between 2.14 and 7.5. The optical band-gap varies between 2.67 and 1.97 eV at different values of r. The film exhibits minimum Hall mobility (240 cm2/Vs)) and electrical resistivity (9.3 Ω.m) at an optimum ratio (r ∼ 5) in room temperature. The increasing crystallite size as a function of the Cu/TiC ratio is observed in the polycrystalline films with Cu and TiC phases. The average particle size has also increased in nanometre dimensions at r ∼ 5. The stoichiometric value close to Cu-TiC3 has culminated in future coating and electronic design applications.
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