Abstract
The heterointerfaces in InAs and InSb thin films grown on GaAs were found to affect the temperature dependence of the film's electrical properties such as electron mobility, electron density, and resistivity. The InAs and InSb surfaces of the films, which act as heterointerfaces with air, were found to similarly affect the electrical properties. It was found that the electron mobility of both InAs and InSb films grown on GaAs substrates has a three-layer structure.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
