Transport Properties of Hydrogen-Terminated Silicon Surface Controlled by Ionic-Liquid Gating

Abstract

We fabricated electric double-layer transistors on the hydrogen-terminated (111)-oriented surface of non-doped silicon using ionic liquid as a gate dielectric. We introduced hole carriers into silicon with the application of a negative gate voltage. The sheet resistance of silicon was controlled by more than three orders of magnitude at 220 K by changing the gate voltage. The temperature dependence of sheet resistance became weak as the gate voltage was increased, suggesting the approach to an insulator–metal transition.