Abstract
The transport of implanted hydrogen isotopes in the refractory semiconducting ceramic, boron carbide, is investigated using the TMAP4 code. A review of experimental results for the diffusivity and solubility of hydrogen isotopes in boron carbide is presented, which provide Arrhenius expressions for the kinetics of hydrogen isotope transport. These expressions are utilized in the TMAP4 model to provide predictions for the hydrogen isotope implantation and desorption for experiments now in progress at the UCSD PISCES laboratory for the National Ignition Facility (NIF).
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