Abstract
AbstractThe electrical resistivities of hydrogen‐doped (Zr803d20)1−xHx (3d = Ni, Co; x ≤ 0.11) metallic glasses have been measured at temperatures between 2 K and 110 K and in magnetic fields up to 1 T for various dopant concentrations. These systems have a high room‐temperature resistivity (ρ > 160 μΩ cm) and become superconducting below 4 K. The increase of the room‐temperature resistivity and its temperature coefficient with hydrogen dopant concentration is explained as due to an increase of disorder with hydrogen‐doping. The temperature and magnetic field dependence of the resistivity has been analysed using theoretical models of weak‐localisation and electron–electron interaction in disordered conductors. The hydrogen dopant is found to reduce the effective electron diffusion constant, D, the spin‐orbit scattering rate, τ−1so, the superconducting transition temperature, Tc, and broadens the superconducting transition region. The contribution of the Maki‐Thompson interaction to the magnetoresistivity is also reduced. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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