Abstract
The graphene growth by thermal decomposition of silicon carbide at the temperature of ~1400°C in a high vacuum of ~10–6 Torr has been optimized. By Raman spectroscopy, the mean thickness of obtained graphene (2–4 single layers) has been estimated and the presence of high-quality graphene areas in the samples has been demonstrated. It has been found out that the four-point resistance of graphene increases in the region of its interface with water approximately by 25%. For the graphene–water interface in the transistor geometry, with variation in the gate-to-source voltage, the field effect corresponding to the hole type of charge carries in graphene has been revealed.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
