Abstract
The current-voltage (I-V) characteristics of Au/n-GaP Schottky barrier diode was analyzed in wide temperature range of 220–400K. The conduction mechanism in the low bias region, except for 220K and 240K, was identified as tunneling (TN). Nevertheless, thermionic emission (TE) becomes dominant as the voltage increases. The diode parameters were evaluated in this region by TE model incorporating the concept of thin insulating layer. The series resistance (Rs) of the device was found to decrease with increase in temperature. In the 220–320K temperature range, as reported for most of the Schottky diodes, the zero-bias barrier height (ϕb0) decreases and the ideality factor (η) increases with the decrease of temperature. The value of modified Richardson constant (A**) obtained agrees well with the theoretical value. However, in the 320–400K range, the variation of η and ϕb0 with temperature shows opposite trend, which is speculated as due to the change in conduction pattern by the temperature induced modifications at the interface.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
