Abstract
The C 76 field-effect transistor (FET) showed n-channel normally-off like behavior with n-channel field-effect mobility, μ n, of 3.9 × 10 −4 cm 2 V −1 s −1, and the highest on–off ratio, 125, among higher fullerenes FETs. The carrier transport in the C 76 FET followed a thermally-activated hopping transport model. The normally-off like properties of C 76 FET could be reasonably explained in terms of the electronic structure of thin films determined by photoemission spectroscopy.
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