Abstract
The transport properties of epitaxial graphene formed on the surface of a metal substrate have been considered within the approach based on the model Anderson-Newns Hamiltonian. An analytical expression for the density of states of epitaxial graphene has been obtained and the renormalization of the Fermi velocity in doped epitaxial graphene has been investigated. The real part of the dynamic conductance of epitaxial graphene has been examined and the limiting values of conductance have been analyzed. When there is no interaction between the graphene and the substrate, the static conductance of epitaxial graphene takes on the universal value 2e 2/π2 ħ. The fundamental problems considered in this study are of crucial importance in the study of optical, magneto-optical, thermoelectric, and thermomagnetic properties of epitaxial graphene. The obtained results are of great interest for practical use of epitaxial graphene as a promising material for microwave technology.
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