Abstract
YMnO3 thin film, doped with Ca at Y–site, was grown on n–type single crystalline Si substrate using pulsed laser deposition (PLD) technique. The structural measurement using X–ray diffraction (XRD) shows single phasic hexagonal unit cell structure. From d–spacing, calculated lattice strain is observed to be compressive in nature. Atomic force microscopy (AFM) was employed to study morphology of the film surface. The current–voltage characteristic exhibits a strong dependence on temperature. Space charge limited conduction (SCLC) mechanism has been best fitted to I–V results owing to the important role of trap centers. An efficient normal to backward diode behavior transition has been observed with increase in temperature.
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