Abstract
AbstractWe present here an electrical transport property study of Te-doped Bi nanowires, and Bi1−xSbx alloy nanowires embedded in a dielectric matrix. The crystal structure of the nanowires were characterized by X-ray diffraction measurements, indicating that the nanowires possess the same lattice structure as bulk Bi in the presence of a small amount of Te or Sb atoms. The resistance measurements of 40-nm Te-doped Bi nanowires were performed over a wide range of temperature (2 K≤ T ≤ 300 K), and the results are consistent with theoretical predictions. The 1D-to-3D localization transition and the boundary scattering effect are both observed in magneto-resistance measurements of Bi1−xSbx alloy nanowires at low temperatures (T < 4 K).
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