Transport properties of B/P doped graphene nanoribbon field-effect transistor

Abstract

In this work, we have studied the transport properties of a 2.55 nm graphene nanoribbon field-effect transistor by the first principle study. The gate voltage (Vgate) shows good control of the drain current (Ids), the Ids increases linearly with the increase of the positive bias voltage (Vbias) and the current density reaches 49 μA/nm. Under the negative Vbias, the device appears the negative differential resistance (NDR) effect and it shows the dependence of the doping positions. We have analyzed the transport mechanism by the band matching relation between two electrodes and the transmission spectra. The Molecular Projected Self-consistent Hamiltonian (MPSH) indicates the electron distribution in the scattering region and the transmission eigenvalues show the transmission probabilities of the electrons. The device shows the potential for applications in memory devices, oscillators and fast switching devices.