Abstract
Bulk samples of chalcogenide glasses of the system As 33Se 67− x Sn x (with x = 0, 1, 3, 5, 7 at.% Sn) were measured for dc conductivity and thermoelectric power (TEP). From conductivity and TEP observations, the activation energies are obtained. The activation energy is dependent on Sn concentration in the system. The difference of activation energies calculated from dc conductivity and TEP measurements ( E Q = E σ ∗ − E s ∗ = 0.13 eV ) is obtained. It is in agreement with the results reported by Overhof and Beyer [Philos. Mag. B49 (1984) L9]. The difference of activation energies is explained on the basis of long range potential fluctuations existing in the bulk of the material due to the random distribution of charge centers. It is also seen that as the percentage of Sn increases in the system, the activation energy increases. This increase in activation energy has been explained on the basis of smearing effects due to local deformations of lattice because of the randomly placed Sn ions.
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