Abstract
Recently we reported the observation of magnetic field induced transitions between insulator and integer quantum Hall effect states in very high mobility Si-MOSFETs at temperatures below 0.5 K and dilute electron concentrations n s below 10 11 cm −2. We present results of activation energy, current-voltage characteristics and threshold field measurements which are attributed to sliding transport in a pinned electron solid (ES) forming near half filled Landau levels at low magnetic fields in Si-MOSFETs.
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