Abstract
A novel method for the synthesis of 2H-NbSe2 thin films by selenization of precursor Nb thin films is reported. The polycrystalline films grow predominantly in the hexagonal 2H-NbSe2 phase with bulk lattice constants. Their remarkable microstructure consists of a three-dimensional network of flake-like grains substantially stacked vertically on the substrate. The electronic transport between 1.2 K and 300 K in zero and applied magnetic fields up to 14 T has been extensively studied. The study comprises resistivity, magnetoresistance, Hall coefficient, upper critical field, and critical current density. The results are discussed taking account of the coexisting charge-density-wave and superconducting phases.
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