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Abstract
The influence of atomic disordering induced by fast neutron irradiation on resistivity ρ and Hall coefficient R H was studied in single crystal samples of heavy fermion system PrOs 4Sb 12. Both ρ( T) and R H( T) of the initial samples can be described by a two-band model with conductivities in the form of ( σ i ) −1= ρ i0 + A i T 2 (indexes i=1,2 correspond to heavy and light holes), where A 1≫ A 2. Disordering leads to the appearance of electronic-like band as well as Kondo-like term in the resistivity. In both cases the essential decrease in charge carrier concentration under influence of the magnetic field is observed.
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