Abstract

Disorder-induced phenomena are evidenced in both electrical and thermal transport properties of various graphite host materials with transition metal fluoride (C xMF y with M = Cr, Rh, Au and Ir). The electrical resistivity results are analyzed in the framework of weak-localization and carrier-carrier interaction models for two-dimensional disordered electron systems. Compared to other acceptor compounds, these fluoride GICs exhibit essentially two new features. First, for some highly resistive compounds, the logarithmic increase on resistivity with decreasing temperature starts already at room temperature and is dominant down to the lowest temperature investigated (1.5K). Second, the effect of disorder is also observable in the temperature dependence of the thermal conductivity and thermoelectric power.

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