Abstract
TlInSe2-TlGdSe2 alloys have been characterized by X-ray diffraction, and their electrical conductivity, Hall coefficient, thermoelectric power, and thermal expansion have been measured as functions of temperature. The results have been used to determine the carrier concentration and Hall mobility in the alloys and their band gap. Partial gadolinium substitution for indium in TlInSe2 increases the lattice parameters of the material and reduces its band gap. The thermal expansion coefficient of the TlIn1 − x Gd x Se2 alloys exhibits no anomalies in the temperature range 77.3–400 K.
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