Abstract
Resistivity under magnetic field, thermopower and Hall coefficient are systematically studied for the[Bi2Ba1.3K0.6Co0.1O4]RS[CoO2]1.97 single crystal.In-plane resistivity (ρab(T)) shows metallic behavior down to 2 K with aT2 dependence below 30 K, while out-of-plane resistivity(ρc(T)) shows metallic behavior at high temperature and a thermal activation semiconductingbehavior below about 12 K. The striking feature is that magnetic field induces aln(1/T) divergingbehavior in both ρab and ρc(T) at low temperature. The positive magnetoresistance (MR) could bewell fitted by the formula based on multiband electronic structure. Theln(1/T) divergingbehavior in ρab and ρc(T) could arise from the magnetic-field-induced 2D weak localization or spin densitywave.
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