Abstract
In this paper, experimental measurements of surface and gap state densities for homogeneous chemical vapor deposited (HOMOCVD) hydrogenated amorphous silicon (a-Si:H) were obtained by C-ω-T, C-V, DLTS and ESR. These results are compared to glow discharge prepared amorphous films. The experimental data and calculated numbers are used to show better agreement with the diffusion rather than the thermionic theory for these amorphous silicon Schottky diodes.
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