Abstract
The transport properties of GaAs/AlGaAs submicron rings with split gates in the conditions corresponding to the ring resistance R SD τ;h/e 2 are studied. Oscillations of R SD as a function of the gate voltage V G are experimentally observed. The oscillations are caused by the single-electron charging of two triangular conducting regions into which the ring is divided in the tunneling regime.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Experimental and Theoretical Physics Letters
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
