Transport phenomena and crystal growth of the GeSe-Xenon system for different gravitational conditions

Abstract

Previous chemical vapor transport experiments of the GeSe-GeI 4 system performed under reduced gravity conditions /1/ yielded crystals of considerably improved surface and bulk morphology. In addition, the mass transport rates observed in microgravity environment were significantly greater than predicted. A quantitative thermodynamic analysis of the solid-gas phase reactions of the GeSe-GeI 4 system revealed the multi-component, multi-reaction nature of the vapor phase /2/. Continued transport studies on ground of the GeSe-GeI 4 system in the presence of inert gases provided experimental evidence for the existence of a boundary layer /2/ and its thickness dependence on GeI 4 pressure in closed tube systems. Systematic transport rate measurements for different orientations of the density gradient relative to the gravity vector demonstrated the effects of ampoule inclination on mass flux /3/. Based on a computational model for simultaneous chemical vapor transport, sublimation, and Stefan flow /3/, the excellent agreement of predicted with ground-based experimental mass transport rates over wide pressure ranges /3/ confirmed the validity of the model and the discrepancy between observed and expected transport rates of the GeSe-GeI 4 system in microgravity.