Abstract
Photo-generated carriers in a photodiode drift in the junction before joining the circuit. We must use a quite thin depletion region so that their transit time does not penalise the microwave response of the devices. However, when the depletion region decreases the component capacity increases, which highly limits the microwave response of this latter. The solution proposed in this work is the use of a mixed depletion region instead of a completely absorbent depletion region in order to have a low transit time while maintaining a low junction capacity. The obtained results show that the photodiodes with mixed depletion regions are faster than photodiodes whose depletion region is completely absorbent for the same thickness. The pure transit cut-off frequency of optimised mixed depletion regions exceeds by 67% that of completely absorbent depletion region for the same thickness of the depletion region.
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