Transport of perpendicular spin in a semiconductor channel via a fully electrical method

Abstract

The transport of perpendicular spins in a GaAs channel is investigated via a fully electrical method. A Tb20Fe62Co18/Co40Fe40B20/MgO contact is used to inject perpendicular spin into the GaAs channel, where the Tb20Fe62Co18 layer produces perpendicular magnetization and the Co40Fe40B20 layer enhances the spin polarization of the injection current. By measuring the three-terminal Hanle effect with an in-plane field, we obtained a spin signal of 0.65 Ω (0.04 Ω) and a spin lifetime of 0.30 ns (0.17 ns) at 1.8 K (300 K). The observed spin signal with a MgO barrier is more than double of that without a MgO barrier.