Abstract
We have used a one-dimensional diffusion model to investigate the transport of nitrogen during a liquid phase epitaxial growth of InAsN layers from Bi and In solvents and GaAsN layers from Ga solvent. The concentration profile of nitrogen near the growing interface has been obtained for the materials for different melt supercooling and cooling rates. Experimental results on the growth of InAsN layers from Bi solutions using the optimum growth parameters suggested by the study are shown.
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