Abstract
films have been grown on high‐purity Ni and Ni 0.1 weight percent (w/o) Cr alloy, at 700°C and 0.21 bar, by sequential oxidation in and . The distributions of oxygen, Ni, and Cr isotopes in the films were analyzed using SIMS. For both materials, the rate controlling transport process was found to be the outward diffusion of Ni through the . Inward oxygen gas transport also occurs and is responsible for the growth of new oxide within the films and for the growth of the inner layer of the well‐developed duplex films which grow on the alloy. A mechanism whereby oxygen gas penetrates the films through fissures to form new oxide in available space is proposed to explain the observations and the growth of duplex films.
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