Transport of electrons in monolithic hot electron Si transistors

Abstract

The transport of electrons across the base of monolithic hot electron transistors is studied using a simplified model. The base is assumed to be limited by abrupt barriers and no account is taken of backscattering from the collector region. The collisions in the base are considered to be of only one type which represents an average between interactions with optical and acoustic phonons. A fundamental part in the analysis is played by the function P EX ( i, x), ( i = 1, 2, …) which gives the total probability of exit into the collector of an electron whose ith collision occurs at a point of abscissa x within the base. The function P EX ( i, x) is determined iteratively for decreasing values of i, using the theorem of compound probabilities, and from there the transport factor α across the base is derived. Programs have been written to this effect, and the results are illustrated by means of examples which demonstrate the effect on the transport factor α of the various parameters of the device, and show some comparisons with a previous theory[4].