Abstract
Amorphous molybdenum silicide compounds have attracted significant interest because of their potential applications in devices, particularly single-photon detectors. In this study, we measured the temperature-dependent resistance and magnetoresistance behavior of amorphous molybdenum silicide compounds to understand the charge transport mechanism, which is of great importance for applications but still unclear. We found that Mott variable hopping conductivity dominated the charge transport in sputtered amorphous molybdenum silicide thin films. In addition, the observed magnetoresistance crossover from negative to positive was ascribed to enhanced interference and shrinkage of the electron wave function, where both varied the probability of hopping between localized sites.
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