Abstract
Hydrogen evolution and dc electrical conductivity measurement have been carried out for a-Si: H prepared by d.c. and r.f. glow discharge decomposition of silane. We show that the kink in log σ vs 1/ T plot can be explained in terms of the film heterogeneity. Kinks can appear or disappear after successive annealing depending on the specimens, and the upward shift in kink temperature by annealing is observed for the specimens showing kinks. These results are interpreted to be due to the structural and compositional change in heterogeneity caused by the diffusion and rearrangement of hydrogen.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
