Year-end Sale % OFF 
Abstract
We have measured the low temperature magnetoresistance and Hall Voltage on an inverted high electron mobility transistor (HEMT) structure with ultra low carrier concentration in the dark . We have observed Shubnikov-de Haas oscillations and quantized Hall voltages at very low magnetic fields.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
