Abstract
Very high purity n-type GaAs epilayers were grown by low pressure metalorganic chemical vapor deposition using triethylgallium and tertiarybutylarsine (TBA) or arsine (AsH3). Peak Hall mobilities of 209 000 cm2/V s at 45 K were observed for growth with TBA. Carrier concentration and mobility measurements down to liquid helium temperatures verified the high purity of these layers. Scattering mechanisms were determined by fits to the mobility data, and found to be in agreement with previous high purity GaAs studies. Donor identification was carried out using magnetophotoluminescence spectroscopy. A comparison of the residual donor species for AsH3- and TBA-grown epilayers is presented. No evidence of preferential n-dopant incorporation was observed for layers grown with TBA.
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