Abstract
Resonant tunneling in a double barrier, three-dimensional quantum well system is observed. As the applied potential brings the discrete energy levels to the Fermi level of the contact, electrons are transmitted across the diode. Due to the presence of a deep depletion in a Si substrate, the transmitted electron is further accelerated mainly ballistically toward the contact resulting in a gain in energy manifested in an increase in current. The separations between successive peaks are larger than what can be understood from a theory based on charging of a spherical nanocrystal. The trapped charges appear to be located at the oxide-Si interfaces. The small size together with large barrier height of a- SiO 2 Si system result in electron transport in solids at energies an order of magnitude higher than conventional hot electron devices.
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