Abstract
We have studied the low temperature transport properties of devices made of InAs/GaSb quantum wells (QWs), where the molecular beam epitaxy (MBE)-grown top AlGaSb barrier was selectively removed and subsequently replaced by a high-k dielectric hafnium oxide layer. From the perspective of quantum spin Hall insulators, the main transport properties of the InAs/GaSb QWs with a hafnium oxide top barrier are similar to those of the InAs/GaSb QWs with MBE-grown barriers. Specifically, the band inversion could be retained after such barrier substitution, and the degree of band inversion could still be tuned by gates. Furthermore, when the Fermi level is tuned into the bulk gap, the bulk conductance vanishes at low temperatures and the transport of the device is dominated by the edge states.
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