Abstract
Electronic quasi-equilibrium transport (at low applied field and in the absence of illumination) in hydrogenated and unhydrogenated amorphous thin film semiconductors exhibits three different regimes: (a) At higher temperatures (above 420 K in a-Si:H) the atomic bond configuration and therewith the density of states distribution (DOS) changes with temperature. (b) At very low temperatures a cross-over to variable-range hopping in tail states must eventually take place, although for device-quality amorphous semiconductors such a transition is not observed, except in transport under high applied electrical field or during photo-excitation, i.e., under conditions far from equilibrium. (c) At intermediate temperatures the DOS is frozen in and strongly depends on thermal history and also on the light exposure history of the samples. The electronic transport in this temperature range is usually thought as being due to thermally activated carriers in extended states.
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