Transport evidence of the spin-polarized topological surface states of α-Sn grown on CdTe by molecular beam epitaxy

Abstract

It is necessary but challenging to verify topological surface states of α-Sn by electrical transport. In this work, we demonstrate conclusive transport evidence on topological properties of an α-Sn film grown on a CdTe substrate by molecular beam epitaxy. A Berry phase determined from Shubnikov–de Haas oscillations is 0.98π. A two-dimensional (2D) Fermi surface is clearly demonstrated by angle-dependent oscillations. We believe the nontrivial topology originates from the 2D Dirac fermions of the topological surface states. In addition, both anisotropic magneto-resistance and planar Hall effect have negative amplitudes at higher fields, which we attribute to the spin-flip backscattering in the topological surface states. We also show that these topological surface states have a long relaxation time of ∼95 fs, making α-Sn a potential candidate for high-efficiency spintronics.