Abstract
Transport equations for particle, momentum, and energy densities in two conduction bands are applied to a self-consistent numerical simulation of heterojunction bipolar transistors. Simple formulas for the relaxation frequencies, by which the variation of the conduction band energy and doping concentration in a heterojunction device are easily taken into account, are proposed. The electron transport in the AlGaAs/GaAs heterojunction bipolar transistor with two different collector structures is analyzed and discussed. >
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