Transport coefficients for a silicon hydrodynamic model extracted from inhomogeneous Monte-Carlo calculations

Abstract

A set of hydrodynamic equations is derived for a more accurate description of the hot-electron and nonstationary transport phenomena in Si devices containing local inhomogeneities in the submicron range. The transport coefficients are extracted from a Monte-Carlo calculation of a modeled test device which includes a rapidly varying electric field. The mobility is found to depend on the ratio of the average energy flux density to the current density (rather than the average energy) and the components of the electronic heat flux density are identified separately. This transport model can accurately predict velocity overshoot and carrier heating phenomena in realistic devices.